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TSM600N25ECH

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The TSM600N25ECH from Taiwan Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 500 to 600 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for TSM600N25ECH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM600N25ECH
  • Manufacturer
    Taiwan Semiconductor
  • Description
    250 V, 8.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    500 to 600 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    8.4 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251 (I-PAK)

Technical Documents
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