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RM100N65DF

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The RM100N65DF from Rectron Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 2.3 to 5.4 milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RM100N65DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM100N65DF
  • Manufacturer
    Rectron Semiconductor
  • Description
    65 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    2.3 to 5.4 milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    59 to 120 nC
  • Power Dissipation
    142 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN5X6-8L
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, Halogen-free

Technical Documents
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