The AONA66916 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode Power MOSFET that is ideal for telecom, solar, and DC-DC applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of less than 3.4 milli-ohms. This MOSFET has a continuous drain current of up to 197 A and a power dissipation of less than 300 W. It utilizes AOS's medium voltage AlphaSGT technology that offers high inrush current tolerance for faster start-up and shorter down time while functioning over a wide safe operating area (SOA). This RoHS-Compliant MOSFET is provided with top-side cooling for improved thermal performance, making it suitable for power supply applications. It is available in a surface-mount package that measures 5 x 6 mm.