The AONS30300 from Alpha and Omega Semiconductor is an N-Channel Enhancement Mode Trench Power MOSFET that is ideal for high-performance OR-ing, E-Fuse, and ultra-high current battery charging/discharging applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 580 milli-ohms. This MOSFET has a continuous drain current of up to 710 A and a power dissipation of less than 483 W. It exhibits a high current handling capability and offers a low drain-source on-resistance in a compact package. This RoHS 2-compliant MOSFET is available in a surface-mount package.
