The AONV110A60 from Alpha and Omega Semiconductor is an N-Channel Enhancement Mode Power MOSFET. This single-channel power MOSFET has a gate-source voltage of ±20 V with a drain-source voltage of 600 and a drain-source resistance of less than 0.11 ohms. It has a continuous drain current of 35 A and a pulsed drain current of 140 A. It has a gate charge of 72 nC and power dissipation of up to 357 W.

This MOSFET is based on a proprietary aMOS5 technology that offers a low on-state resistance with optimized switching parameters for better EMI performance. It consists of an enhanced body diode to provide robustness and fast reverse recovery. This power MOSFET is available in a surface-mount package and is ideal for PFC and PWM stages (LLC, FSFB, TTF) of server, telecom, industrial, UPS, and solar inverters applications.