The AOTL66912Q from Alpha & Omega Semiconductor is an N-Channel Trench MOSFET that is ideal for telecom hot-swap, load switch, solar, and battery management applications. It has a drain-source breakdown voltage of 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 1.7 milli-ohms. This MOSFET has a continuous drain current of up to 380 A and a power dissipation of less than 500 W. It is designed based on AOS AlphaSGT technology that provides excellent figure of merit (FOM) to ensure balanced performance in hard-switching applications. This Trench MOSFET combines low drain-source on-resistance and a wide safe operating area (SOA), thereby resulting in improved packing density and high drive capability. It allows a higher inrush current for faster start-up and shorter downtime. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 5 x 6 mm.