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CDM2208-800FP

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CDM2208-800FP Image

The CDM2208-800FP from Central Semiconductor is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 1420 to 1600 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for CDM2208-800FP can be seen below.

Product Specifications

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Product Details

  • Part Number
    CDM2208-800FP
  • Manufacturer
    Central Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    1420 to 1600 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    24.45 nC
  • Power Dissipation
    57 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-220FP
  • Applications
    Power Factor Correction, Alternative energy inverters, Solid State Lighting (SSL)

Technical Documents
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