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GP3T080A120H

MOSFET by SemiQ (26 more products)
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The GP3T080A120H from SemiQ is a MOSFET with Continous Drain Current 23 to 32 A, Drain Source Resistance 80 to 132 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -8 to 22 V, Gate Source Threshold Voltage 1.8 to 4 V. Tags: Through Hole. More details for GP3T080A120H can be seen below.

Product Specifications

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Product Details

  • Part Number
    GP3T080A120H
  • Manufacturer
    SemiQ
  • Description
    -8 to 22 V, 23 to 32 A N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    23 to 32 A
  • Drain Source Resistance
    80 to 132 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -8 to 22 V
  • Gate Source Threshold Voltage
    1.8 to 4 V
  • Gate Charge
    53 nC
  • Power Dissipation
    147 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4L
  • Applications
    Solar Inverters, Switch mode power supplies, UPS, Induction heating and welding, EV charging stations, High voltage DC/DC converters, Motor drives

Technical Documents
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