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CDM22010-650

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CDM22010-650 Image

The CDM22010-650 from Central Semiconductor is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 880 to 1000 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for CDM22010-650 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CDM22010-650
  • Manufacturer
    Central Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    880 to 1000 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    20 nC
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power Factor Correction, Motor drives, Alternative energy inverters, Solid state lighting

Technical Documents
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