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CDM22012-800LRFP

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CDM22012-800LRFP Image

The CDM22012-800LRFP from Central Semiconductor is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 370 to 450 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for CDM22012-800LRFP can be seen below.

Product Specifications

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Product Details

  • Part Number
    CDM22012-800LRFP
  • Manufacturer
    Central Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    370 to 450 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    52.4 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-220FP
  • Applications
    Power Factor Correction, Alternative energy inverters, Solid State Lighting (SSL)

Technical Documents
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