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CMLDM7003E

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The CMLDM7003E from Central Semiconductor is a MOSFET with Continous Drain Current 0.28 A, Drain Source Resistance 1100 to 2300 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.49 to 1 V. Tags: Surface Mount. More details for CMLDM7003E can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMLDM7003E
  • Manufacturer
    Central Semiconductor
  • Description
    50 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.28 A
  • Drain Source Resistance
    1100 to 2300 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.49 to 1 V
  • Gate Charge
    0.764 nC
  • Power Dissipation
    0.15 to 0.35 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-563

Technical Documents
View details on the manufacturer's website
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