1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Central Semiconductor
  6. CMNDM8001 TR

CMNDM8001 TR

Download Datasheet Request Quote

Note : Your request will be directed to Central Semiconductor.

CMNDM8001 TR Image

The CMNDM8001 TR from Central Semiconductor is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 1900 to 45000 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 0.6 to 1.1 V. Tags: Surface Mount. More details for CMNDM8001 TR can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    CMNDM8001 TR
  • Manufacturer
    Central Semiconductor
  • Description
    20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Dimensions
    1.05 x 1.05 x 0.5 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    1900 to 45000 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    0.6 to 1.1 V
  • Gate Charge
    0.658 nC
  • Power Dissipation
    0.25 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-953
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable equipment

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products