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FTK900N06T

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The FTK900N06T from First Silicon is a MOSFET with Continous Drain Current 4 to 6 A, Drain Source Resistance 71 to 126 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for FTK900N06T can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK900N06T
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 4 to 6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 to 6 A
  • Drain Source Resistance
    71 to 126 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    11 nC
  • Switching Speed
    6.5 to 16 ns
  • Power Dissipation
    7.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    DC-DC Converters, Solenoid and Motor Drivers
  • Note
    Input Capacitance :- 525 pF
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