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JSM9DN04

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The JSM9DN04 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 5.2 to 9 A, Drain Source Resistance 17 to 35 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for JSM9DN04 can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM9DN04
  • Manufacturer
    JSMicro Semiconductor
  • Description
    40 V, 5.2 to 9 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.2 to 9 A
  • Drain Source Resistance
    17 to 35 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    10 nC
  • Switching Speed
    2.8 to 14.5 ns
  • Power Dissipation
    2.0 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Note
    Input Capacitance :- 630 pF

Technical Documents
View details on the manufacturer's website
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