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CP350-CZDM8502N

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The CP350-CZDM8502N from Central Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 6300 milliohm, Drain Source Breakdown Voltage 850 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Die. More details for CP350-CZDM8502N can be seen below.

Product Specifications

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Product Details

  • Part Number
    CP350-CZDM8502N
  • Manufacturer
    Central Semiconductor
  • Description
    850 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    6300 milliohm
  • Drain Source Breakdown Voltage
    850 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    9.7 nC
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Die
  • Applications
    LED lighting, Switch-mode power supplies, Power factor corrections

Technical Documents
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