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CP373-CMPDM303NH

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The CP373-CMPDM303NH from Central Semiconductor is a MOSFET with Continous Drain Current 3.6 A, Drain Source Resistance 40 to 78 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Die. More details for CP373-CMPDM303NH can be seen below.

Product Specifications

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Product Details

  • Part Number
    CP373-CMPDM303NH
  • Manufacturer
    Central Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.6 A
  • Drain Source Resistance
    40 to 78 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Gate Charge
    13 nC
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Die

Technical Documents
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