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YJH03N06B

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The YJH03N06B from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 86 to 200 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 0.65 to 1.55 V. Tags: Surface Mount. More details for YJH03N06B can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJH03N06B
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    86 to 200 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    0.65 to 1.55 V
  • Gate Charge
    13.8 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Battery management, Load switch, Power management

Technical Documents
View details on the manufacturer's website
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