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CP761X-CEDM8001

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The CP761X-CEDM8001 from Central Semiconductor is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 8000 to 45000 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 0.6 to 1.1 V. Tags: Die. More details for CP761X-CEDM8001 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CP761X-CEDM8001
  • Manufacturer
    Central Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    8000 to 45000 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    0.6 to 1.1 V
  • Gate Charge
    0.658 nC
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Die

Technical Documents
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