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MMFTN123-Q

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MMFTN123-Q Image

The MMFTN123-Q from Diotec Semiconductor is a MOSFET with Continous Drain Current 0.17 A, Drain Source Resistance 6000 to 10000 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2 V. Tags: Surface Mount. More details for MMFTN123-Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMFTN123-Q
  • Manufacturer
    Diotec Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.17 A
  • Drain Source Resistance
    6000 to 10000 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2 V
  • Power Dissipation
    0.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Signal processing, Battery management Drivers, Logic Level Converter, Commercial / Industrial grade

Technical Documents
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