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CWDM3011N

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CWDM3011N Image

The CWDM3011N from Central Semiconductor is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 14 to 30 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 11 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for CWDM3011N can be seen below.

Product Specifications

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Product Details

  • Part Number
    CWDM3011N
  • Manufacturer
    Central Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    6.18 x 5.01 x 1.71 mm
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    14 to 30 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    11 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    6.3 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Load/Power switches, DC-DC converter circuits, Power management

Technical Documents
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