1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Central Semiconductor
  6. CXDM1002N TR

CXDM1002N TR

Download Datasheet Request Quote

Note : Your request will be directed to Central Semiconductor.

CXDM1002N TR Image

The CXDM1002N TR from Central Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 125 to 350 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for CXDM1002N TR can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    CXDM1002N TR
  • Manufacturer
    Central Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    4.7 x 4.5 x 1.7 mm
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    125 to 350 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    6 nC
  • Power Dissipation
    1.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable equipment

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products