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CMT-PLA3SB12340A

MOSFET by Cissoid (4 more products)
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CMT-PLA3SB12340A Image

The CMT-PLA3SB12340A from Cissoid is a MOSFET with Continous Drain Current 295 to 340 A, Drain Source Resistance 3.25 to 5.15 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Threshold Voltage 1.7 to 3.5 V, Gate Charge 910 nC. Tags: Module. More details for CMT-PLA3SB12340A can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMT-PLA3SB12340A
  • Manufacturer
    Cissoid
  • Description
    1.7 to 3.5 V, 910 nC, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    104 x 154 x 34 mm (W x L x H)
  • Number of Channels
    Hex
  • Continous Drain Current
    295 to 340 A
  • Drain Source Resistance
    3.25 to 5.15 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Threshold Voltage
    1.7 to 3.5 V
  • Gate Charge
    910 nC
  • Temperature operating range
    -40 to 125 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Module

Technical Documents
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