The CXT-PLA3SA12450A from Cissoid is a 3-phase SiC MOSFET that is ideal for inverter applications. It has a drain-source voltage of up to 1200 V, a gate threshold voltage of up to 2.15 V, and a drain-source on-resistance of 3.25 milli-ohms. This MOSFET has a continuous drain current of up to 450 A and a pulsed drain current of less than 720 A. It integrates power switches and the gate driver based on the CISSOID HADES2 chipset providing fast switching speed. This MOSFET features under voltage lockout (UVLO), desaturation protection and soft shutdown turn-off (SSD) for safety and high reliability. It offers active miller clamping (AMC) operations and addresses high power density water-cooled converters offering operation at high junction temperatures (up to 175°C). This SiC MOSFET is available in a module that measures 104 x 154 x 34 mm.
