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MTA050B01DFA6-0-T1-G

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The MTA050B01DFA6-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current -3.2 to -7 A, Drain Source Resistance 43 to 150 milli-ohm, Drain Source Breakdown Voltage -14 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.3 to -1.2 V. Tags: Surface Mount. More details for MTA050B01DFA6-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTA050B01DFA6-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    -14 V, -3.2 to -7 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.2 to -7 A
  • Drain Source Resistance
    43 to 150 milli-ohm
  • Drain Source Breakdown Voltage
    -14 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.3 to -1.2 V
  • Gate Charge
    8.8 nC
  • Switching Speed
    11 to 56 ns
  • Power Dissipation
    3.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2×2-6L
  • Note
    Input Capacitance :- 680 pF

Technical Documents
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