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MTDN1N50CN8J-0-T1-G

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The MTDN1N50CN8J-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current 0.28 to 0.53 A, Drain Source Resistance 11.8 to 16 ohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for MTDN1N50CN8J-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTDN1N50CN8J-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    500 V, 0.28 to 0.53 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.28 to 0.53 A
  • Drain Source Resistance
    11.8 to 16 ohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    3.7 nC
  • Switching Speed
    4.2 to 23 ns
  • Power Dissipation
    3.75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    2928-8J
  • Note
    Input Capacitance :- 63.7 pF

Technical Documents
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