The MTE010N06RE3-0-UB-G from Cystech Electronics is a MOSFET with Continous Drain Current 8.4 to 34 A, Drain Source Resistance 14 to 18.5 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE010N06RE3-0-UB-G can be seen below.