1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Cystech Electronics
  6. MTE011N08RH8-0-T6-G

MTE011N08RH8-0-T6-G

Download Datasheet Request Quote

Note : Your request will be directed to Cystech Electronics.

The MTE011N08RH8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current 7.8 to 42 A, Drain Source Resistance 9 to 12 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for MTE011N08RH8-0-T6-G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MTE011N08RH8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    80 V, 7.8 to 42 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.8 to 42 A
  • Drain Source Resistance
    9 to 12 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    24 nC
  • Switching Speed
    19 to 31 ns
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5×6
  • Note
    Input Capacitance :- 1500 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products