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MTE090P12V8-0-T6-G

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The MTE090P12V8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current -12 to -2.3 A, Drain Source Resistance 115 to 160 milli-ohm, Drain Source Breakdown Voltage -120 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for MTE090P12V8-0-T6-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE090P12V8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    -120 V, -12 to -2.3 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 to -2.3 A
  • Drain Source Resistance
    115 to 160 milli-ohm
  • Drain Source Breakdown Voltage
    -120 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    24 nC
  • Switching Speed
    15 to 48 ns
  • Power Dissipation
    43 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3×3
  • Note
    Input Capacitance :- 1250 pF

Technical Documents
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