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MTE1D8N04E3-0-UB-S

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The MTE1D8N04E3-0-UB-S from Cystech Electronics is a MOSFET with Continous Drain Current 127.3 to 180 A, Drain Source Resistance 1.8 to 2.6 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE1D8N04E3-0-UB-S can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE1D8N04E3-0-UB-S
  • Manufacturer
    Cystech Electronics
  • Description
    40 V, 127.3 to 180 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    127.3 to 180 A
  • Drain Source Resistance
    1.8 to 2.6 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    118.2 nC
  • Switching Speed
    20.2 to 74.8 ns
  • Power Dissipation
    188 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 6020 pF

Technical Documents
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