The E4M0013120K from Wolfspeed is an Automotive-Qualified SiC MOSFET. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 23 milli-ohms. This MOSFET is based on Wolfspeed's E4M generation SiC MOSFET technology and consists of a separate driver source pin for reducing switching losses and gate ringing. It meets automotive industry standards and provides improved insulation and safety with optimum creepage distance between drain and source terminals. This AEC-Q101-qualified MOSFET offers high blocking voltages and high switching speeds for high-voltage switching applications. It incorporates a fast intrinsic diode with a low reverse recovery charge to reduce switching losses. This RoHS-compliant MOSFET is available in a surface-mount package that measures 15.75 x 40.61 x 4.83 mm and is suitable for high-voltage DC/DC converters, EV battery chargers, and motor control applications.