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ISMQ10ND1-1

MOSFET by ISOCOM (59 more products)
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The ISMQ10ND1-1 from ISOCOM is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 0.29 ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for ISMQ10ND1-1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISMQ10ND1-1
  • Manufacturer
    ISOCOM
  • Description
    100 V, 1.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    0.29 ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    17 nC
  • Switching Speed
    21 to 30 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Through Hole
  • Package
    DIP-16
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters, Solar inverters, LED Lighting power supplies
  • Note
    Input Capacitance :- 370 pF

Technical Documents
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