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KFCAB21B10L

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The KFCAB21B10L from Nuvoton Technology is a MOSFET with Continous Drain Current 22.7 to 54.0 A, Drain Source Resistance 0.60 to 3.00 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.35 to 1.40 V. Tags: Chip. More details for KFCAB21B10L can be seen below.

Product Specifications

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Product Details

  • Part Number
    KFCAB21B10L
  • Manufacturer
    Nuvoton Technology
  • Description
    12 V, 22.7 to 54.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    22.7 to 54.0 A
  • Drain Source Resistance
    0.60 to 3.00 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.35 to 1.40 V
  • Gate Charge
    70 nC
  • Switching Speed
    2.4 to 14.0 µs
  • Power Dissipation
    3.50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 8050 pF

Technical Documents
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