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UN0315N1R6-PD56

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The UN0315N1R6-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 152 A, Drain Source Resistance 1.6 to 3.5 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3.0 V. Tags: Surface Mount. More details for UN0315N1R6-PD56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN0315N1R6-PD56
  • Manufacturer
    UN Semiconductor
  • Description
    30 V, 152 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    152 A
  • Drain Source Resistance
    1.6 to 3.5 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3.0 V
  • Gate Charge
    63.2 nC
  • Switching Speed
    15.8 to 56.0 ns
  • Power Dissipation
    40 to 100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5*6-8L
  • Applications
    DC/DC Converter, Battery Management System, Industrial and Motor Drive applications, Synchronous rectifier applications
  • Note
    Input Capacitance :- 3927 pF

Technical Documents
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