1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Cystech Electronics
  6. MTE2D0N06BRH8-0-T6-G

MTE2D0N06BRH8-0-T6-G

Download Datasheet Request Quote

Note : Your request will be directed to Cystech Electronics.

The MTE2D0N06BRH8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current 18 to 107 A, Drain Source Resistance 2.5 to 3.3 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for MTE2D0N06BRH8-0-T6-G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MTE2D0N06BRH8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    60 V, 18 to 107 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 to 107 A
  • Drain Source Resistance
    2.5 to 3.3 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    75 nC
  • Switching Speed
    15 to 36 ns
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5×6
  • Note
    Input Capacitance :- 5540 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products