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SiUD412ED-T1-GE3

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SiUD412ED-T1-GE3 Image

The SiUD412ED-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 0.5 A, Drain Source Resistance 270 to 250 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -5 to 5 V, Gate Source Threshold Voltage 0.35 to 0.9 V. Tags: Surface Mount. More details for SiUD412ED-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiUD412ED-T1-GE3
  • Manufacturer
    Vishay
  • Description
    12 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.5 A
  • Drain Source Resistance
    270 to 250 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -5 to 5 V
  • Gate Source Threshold Voltage
    0.35 to 0.9 V
  • Gate Charge
    0.47 to 0.71 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 0806
  • Applications
    Load switch, High speed switching, DC/DC converters, Battery-operated and mobile devices

Technical Documents
View details on the manufacturer's website
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