1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Cystech Electronics
  6. MTE3D6N10RF3-0-T7-G

MTE3D6N10RF3-0-T7-G

Download Datasheet Request Quote

Note : Your request will be directed to Cystech Electronics.

The MTE3D6N10RF3-0-T7-G from Cystech Electronics is a MOSFET with Continous Drain Current 14 to 119 A, Drain Source Resistance 3.7 to 4.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for MTE3D6N10RF3-0-T7-G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MTE3D6N10RF3-0-T7-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 14 to 119 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 to 119 A
  • Drain Source Resistance
    3.7 to 4.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    73 nC
  • Switching Speed
    42 to 61 ns
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Note
    Input Capacitance :- 5250 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products