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MTNK6A3-0-TB-G

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The MTNK6A3-0-TB-G from Cystech Electronics is a MOSFET with Continous Drain Current 0.35 to 0.71 A, Drain Source Resistance 1.1 to 3 Ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for MTNK6A3-0-TB-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTNK6A3-0-TB-G
  • Manufacturer
    Cystech Electronics
  • Description
    60 V, 0.35 to 0.71 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.35 to 0.71 A
  • Drain Source Resistance
    1.1 to 3 Ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.75 to 1.5 nC
  • Switching Speed
    4 to 10 ns
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Note
    Input Capacitance :- 25 pF

Technical Documents
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