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2N6849-HR

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The 2N6849-HR from Digitron Semiconductors is a MOSFET with Continous Drain Current -4.1 A, Drain Source Resistance 0.54 Ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -5 to -1 V. Tags: Through Hole. More details for 2N6849-HR can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N6849-HR
  • Manufacturer
    Digitron Semiconductors
  • Description
    -100 V, -4.1 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.1 A
  • Drain Source Resistance
    0.54 Ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -5 to -1 V
  • Gate Charge
    34.8 nC
  • Switching Speed
    60 to 250 ns
  • Power Dissipation
    25 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Through Hole
  • Package
    TO-39
  • Applications
    Used in control and sensing applications

Technical Documents
View details on the manufacturer's website
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