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TW015Z120C,S1F

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TW015Z120C,S1F Image

The TW015Z120C,S1F from Toshiba is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 15 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Charge 397 nC. Tags: Through Hole. More details for TW015Z120C,S1F can be seen below.

Product Specifications

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Product Details

  • Part Number
    TW015Z120C,S1F
  • Manufacturer
    Toshiba
  • Description
    N-Channel Silicon Carbide MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    15 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Charge
    397 nC
  • Power Dissipation
    431 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Applications
    Switching Voltage Regulators

Technical Documents
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