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BS170P

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BS170P Image

The BS170P from Diodes Incorporated is a MOSFET with Continous Drain Current 0.27 A, Drain Source Resistance 5000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 3 V. Tags: Through Hole. More details for BS170P can be seen below.

Product Specifications

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Product Details

  • Part Number
    BS170P
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.27 A
  • Drain Source Resistance
    5000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 3 V
  • Power Dissipation
    0.625 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO92

Technical Documents
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