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BSS84Q

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The BSS84Q from Diodes Incorporated is a MOSFET with Continous Drain Current -0.13 A, Drain Source Resistance 3200 to 10000 milliohm, Drain Source Breakdown Voltage -50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V V. Tags: Surface Mount. More details for BSS84Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSS84Q
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.13 A
  • Drain Source Resistance
    3200 to 10000 milliohm
  • Drain Source Breakdown Voltage
    -50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V V
  • Gate Charge
    28 to 59 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, Analog Switch

Technical Documents
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