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DMG1012T

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DMG1012T Image

The DMG1012T from Diodes Incorporated is a MOSFET with Continous Drain Current 0.45 to 0.63 A, Drain Source Resistance 0.30 to 0.70 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 6 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Through Hole. More details for DMG1012T can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG1012T
  • Manufacturer
    Diodes Incorporated
  • Description
    6 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.45 to 0.63 A
  • Drain Source Resistance
    0.30 to 0.70 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    6 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    736.6 nC
  • Power Dissipation
    0.28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-523

Technical Documents
View details on the manufacturer's website
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