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DMG3420UQ

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The DMG3420UQ from Diodes Incorporated is a MOSFET with Continous Drain Current 3.43 to 5.47 A, Drain Source Resistance 21 to 91 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.50 to 1.2 V. Tags: Through Hole. More details for DMG3420UQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG3420UQ
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V N-channel E-mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.43 to 5.47 A
  • Drain Source Resistance
    21 to 91 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.50 to 1.2 V
  • Gate Charge
    5.4 nC
  • Power Dissipation
    0.74 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-23
  • Applications
    General Purpose Interfacing Switch, Power Management Functions

Technical Documents
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