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DMG2301L

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DMG2301L Image

The DMG2301L from Diodes Incorporated is a MOSFET with Continous Drain Current -3 A, Drain Source Resistance 120 to 150 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.2 to -0.4 V. Tags: Surface Mount. More details for DMG2301L can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG2301L
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3 A
  • Drain Source Resistance
    120 to 150 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.2 to -0.4 V
  • Gate Charge
    5.5 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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