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PSMN2R8-40YSD

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PSMN2R8-40YSD Image

The PSMN2R8-40YSD from Nexperia is a MOSFET with Continous Drain Current 119 to 160 A, Drain Source Resistance 2.4 to 5.4 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 3.6 V. Tags: Surface Mount. More details for PSMN2R8-40YSD can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN2R8-40YSD
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 28 to 62 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    119 to 160 A
  • Drain Source Resistance
    2.4 to 5.4 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 3.6 V
  • Gate Charge
    28 to 62 nC
  • Power Dissipation
    147 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    High-performance synchronous rectification, DC-to-DC converters, Brushless DC motor control, Battery protection, Load-switch and eFuse

Technical Documents
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