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DMG3401LSNQ

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The DMG3401LSNQ from Diodes Incorporated is a MOSFET with Continous Drain Current -3 A, Drain Source Resistance 41 to 85 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.3 to -0.5 V. Tags: Surface Mount. More details for DMG3401LSNQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG3401LSNQ
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3 A
  • Drain Source Resistance
    41 to 85 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.3 to -0.5 V
  • Gate Charge
    11.6 nC
  • Power Dissipation
    1.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC59
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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