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DMG3414U

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The DMG3414U from Diodes Incorporated is a MOSFET with Continous Drain Current 3.2 to 4.2 A, Drain Source Resistance 19 to 37 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Through Hole. More details for DMG3414U can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG3414U
  • Manufacturer
    Diodes Incorporated
  • Description
    8 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.2 to 4.2 A
  • Drain Source Resistance
    19 to 37 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.5 to 0.9 V
  • Gate Charge
    9.6 nC
  • Power Dissipation
    0.78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-23

Technical Documents
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