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DMG7401SFGQ

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DMG7401SFGQ Image

The DMG7401SFGQ from Diodes Incorporated is a MOSFET with Continous Drain Current -9.8 A, Drain Source Resistance 9000 to 25000 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -3 to -1.7 V. Tags: Surface Mount. More details for DMG7401SFGQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG7401SFGQ
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9.8 A
  • Drain Source Resistance
    9000 to 25000 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -3 to -1.7 V
  • Gate Charge
    20.5 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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