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DMHC3025LSDQ

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DMHC3025LSDQ Image

The DMHC3025LSDQ from Diodes Incorporated is a MOSFET with Continous Drain Current 3.6 to 7.8 A, Drain Source Resistance 19 to 80 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Through Hole. More details for DMHC3025LSDQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMHC3025LSDQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, Dual, N/P Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.6 to 7.8 A
  • Drain Source Resistance
    19 to 80 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    5.4 to 11.7 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SO-8
  • Applications
    Solenoids, DC Motors, Audio Outputs

Technical Documents
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