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DMHC4035LSDQ

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DMHC4035LSDQ Image

The DMHC4035LSDQ from Diodes Incorporated is a MOSFET with Continous Drain Current 3.1 to 5.8 A, Drain Source Resistance 26 to 100 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for DMHC4035LSDQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMHC4035LSDQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, Dual, N/P Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.1 to 5.8 A
  • Drain Source Resistance
    26 to 100 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5.4 to 12.5 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SO-8
  • Applications
    DC Motor Control, DC-AC Inverters

Technical Documents
View details on the manufacturer's website
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